发明名称 |
Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben |
摘要 |
In a semiconductor wafer substrate (20) for power semiconductor components (1) and in a method for producing the same, the semiconductor wafer substrate (20) has a large-area, buried rear side electrode (3) in form of a layer arranged between a self-supporting wafer substrate (4) and a non-self-supporting monocrystalline silicon wafer layer (5) arranged on the rear side electrode (3). The rear side electrode (3) has a ternary carbide and/or a ternary nitride and/or carbon. |
申请公布号 |
DE102005061263(B4) |
申请公布日期 |
2007.10.11 |
申请号 |
DE20051061263 |
申请日期 |
2005.12.20 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
SCHULZE, HANS-JOACHIM;STRACK, HELMUT |
分类号 |
H01L29/417;H01L21/78;H01L23/12;H01L29/45;H01L29/739;H01L29/78;H01L29/861 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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