| 摘要 |
An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
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| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY;MURAI, AKIHIKO;CHEN, CHRISTINA, YE;THOMPSON, DANIEL, B.;MCCARTHY, LEE, S.;DENBAARS, STEVEN, P.;NAKAMURA, SHUJI;MISHRA, UMESH, K. |
发明人 |
MURAI, AKIHIKO;CHEN, CHRISTINA, YE;THOMPSON, DANIEL, B.;MCCARTHY, LEE, S.;DENBAARS, STEVEN, P.;NAKAMURA, SHUJI;MISHRA, UMESH, K. |
