| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of being manufactured inexpensively, with a small size and large threshold voltage value difference at the time of reading data, and capable of suppressing a bipolar disturbance. <P>SOLUTION: The semiconductor storage device includes a support substrate SUB composed of a semiconductor material; an insulating film BGI provided on the support substrate; a semiconductor film 11 connected to the support substrate by penetrating the insulating film; a drain layer D provided on the insulating film; a source layer S provided on the insulating film and connected to the semiconductor film; a body area B provided between the drain layer and the source layer, in an electrically floating state, capable of accumulating a charge for storing data; a gate insulating film GI provided on the body area; and a gate electrode G provided on the gate insulating film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
