| 摘要 |
<P>PROBLEM TO BE SOLVED: To minimize coarseness of the surface of a high dielectric film formed by a method of forming a high dielectric film that uses MOCVD method. <P>SOLUTION: First, organic metal compound materials of a high dielectric film are supplied to the surface of a substrate to be treated, under the condition that the residence time of the organic metal compound materials in the treatment container be comparatively long, then, crystal nuclei are formed on the surface of the substrate to be treated in a high surface density, and the organic metal compound materials are supplied under the condition that the residence time be comparatively short. <P>COPYRIGHT: (C)2008,JPO&INPIT |
