| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device (LED or LD) that has an active layer comprised of a nitride semiconductor not containing indium and that achieved a shorter wavelength, a higher light emitting output, and a lower drive voltage (low threshold) by providing uneveness (Alloy-Disorder) in the active layer and/or an uneven shape on the surface of the active layer to activate the dispersion of electrons and holes in the active layer, and thereby to obtain Gain at a wavelength longer than that of an absorption edge of the active layer (= a low energy). <P>SOLUTION: The uneven shape having a period of 6 to 500 nm is formed on the surface of the active layer by forming the active layer that is comprised of Al<SB>x</SB>Ga<SB>1-x</SB>N not containing indium and has a film thickness between 3 nm and 500 nm at a low temperature below 950°C lower than conventional crystal growth temperature (1,040°C to 1,100°C). <P>COPYRIGHT: (C)2008,JPO&INPIT |
