| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor wafer wherein crack generation when a wafer is back-lapped at final device size can be reduced. SOLUTION: The compound semiconductor wafer 1 is formed by cutting a compound semiconductor crystal into semiconductor wafers and chamfering the corners of the semiconductor wafer like a curved face to make an end face 1s. The rear face 1g opposite to the front face 1u of the wafer 1 wherein an epitaxial growth layer is formed is ground, and an angle formed by a tangential line t1 of the end face 1s on a crossing line of the rear face 1g and the end face 1s and the rear face 1g is >50°and≤90°. COPYRIGHT: (C)2008,JPO&INPIT
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