| 摘要 |
PROBLEM TO BE SOLVED: To achieve high-sensitivity inspection of a semiconductor pattern easily damaged by electron beam irradiation by enabling inspection using a charging control function with low incident energy and in a wide visual field. SOLUTION: In an SEM type wafer inspection device, when inspection using a charging control function is executed, acceleration voltage/control voltage/deceleration voltage are changed in conjunction with one another so as not to change incident energy defined by the acceleration voltage-deceleration voltage, and a bias voltage defined by the deceleration voltage-control voltage. Thereby, charging of a wafer can be controlled while suppressing electrostatic lens action generated in the vicinity of a control electrode. As a result, the inspection using the charging control function with low incident energy and in a wide visual field is enabled, and the high-sensitivity inspection of a semiconductor pattern easily damaged by electron beam irradiation can be achieved. The acceleration voltage/control voltage/deceleration voltage are changed in conjunction with one another so as not to change incident energy defined by the acceleration voltage-deceleration voltage, and a bias voltage defined by the deceleration voltage-control voltage. COPYRIGHT: (C)2008,JPO&INPIT
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