| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a manufacturing method for a semiconductor device that can improve yield of a bump. <P>SOLUTION: An insulating layer 12, a barrier layer, and a seed layer are formed on a principal surface 111 for a semiconductor substrate 11, and a bump 22 is formed on the seed layer. Then, a protection layer 15 is formed such that it covers the seed layer and the bump 22, and the protection layer 15 is partly removed so that the part of it covered by the side wall surface 221 of the bump 22 may be left. Next, the principal surface 111 of the semiconductor substrate 11 is supported by a support 32 using a joining material 31, and the rear side 112 of the semiconductor substrate 11 is ground. And after grinding the rear side, the support 32 and the joining material 31 are peeled off. <P>COPYRIGHT: (C)2008,JPO&INPIT |
