| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor wafer or a nitride semiconductor device where board exfoliation is simplified and damage of an exfoliated surface is reduced, and to provide a manufacturing method thereof. <P>SOLUTION: On a starting substrate, a sacrificial film of patterns is formed which exposes the surface of the starting substrate selectively and which is continuous from the end of the starting substrate. On the starting substrate including the sacrificial film, a void nitride semiconductor layer is formed. On the void nitride semiconductor layer, a nitride semiconductor layer for forming an element is formed. On the nitride semiconductor layer for forming the element, a supporting substrate is mounted, and thereafter the sacrificial film is removed to exfoliate the starting substrate from the void nitride semiconductor layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
