发明名称 PRODUCTION METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technology capable of producing a semiconductor device and a display device using a peeling process, by which a transpose process can be performed in a satisfactory state maintaining the shape and characteristics of the device before the peeling and thereby to provide a technology capable of producing the semiconductor and display devices having higher reliability with high yield without complicating the devices and the processes. SOLUTION: This production method comprises: disposing an organic compound layer containing a photocatalyst substance on a first substrate having light transmitting properties; disposing an element layer on the organic compound layer containing a photocatalyst substance; irradiating a light to the organic compound layer containing a photocatalyst substance by passing the light through the first substrate; and peeling the element layer from the first substrate. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007266593(A) 申请公布日期 2007.10.11
申请号 JP20070047097 申请日期 2007.02.27
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 JINBO YASUHIRO;MORISUE MASAFUMI;KIMURA HAJIME;YAMAZAKI SHUNPEI
分类号 H01L21/02;G02F1/1345;G02F1/136;G02F1/1368;H01L21/336;H01L27/12;H01L29/786;H01L51/50;H05B33/10;H05B33/14 主分类号 H01L21/02
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