| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitance type sensor capable of suppressing a parasitic capacity low, and increasing the setting degree of freedom of a potential extraction position of each electrode. SOLUTION: An insulating layer 20 includes a through hole 24, and the surface 6d of a fixed electrode 6 of a semiconductor layer 2 is exposed, and a conductor layer 23 connected electrically is formed over the surface 6d of the fixed electrode 6, the inner circumferential surface 24b of the through hole 24, and the surface 20a of the insulating layer 20, to thereby extract the potential of the fixed electrode 6 from the conductor layer 23 on the surface 20a of the insulating layer 20. COPYRIGHT: (C)2008,JPO&INPIT
|
