发明名称 Method for removing damaged dielectric material
摘要 A method for removing a damaged dielectric material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process includes a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.
申请公布号 US2007235411(A1) 申请公布日期 2007.10.11
申请号 US20060390193 申请日期 2006.03.28
申请人 TOKYO ELECTON LIMITED 发明人 BROWN IAN J.
分类号 C03C15/00;C03C25/68;C23F1/00 主分类号 C03C15/00
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