| 摘要 |
A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The high temperature pedestal comprises a scored upper surface configured to minimize substrate slippage.
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