| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of improving coverage properties when embedding a metal material into holes, grooves, or the like, and to provide the semiconductor device. <P>SOLUTION: In the manufacturing method of the semiconductor device 91, first a low-transmittance resist film 22 is formed on a substrate 51. Then, the resist film 22 is exposed to light and developed by using a holographic aligner 11, thus forming a first resist pattern 61a having a tapered opening hole 62a where the side of the holographic aligner 11 is wide. With the first resist pattern 61a as a mask, a silicon oxide film 53 is etched anisotropically, and the first resist pattern 61a is also etched anisotropically, thus forming the shape of a second resist pattern 61b from the that of the first resist pattern 61a and forming a tapered contact hole having a wide mouth. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
