发明名称 Integration scheme for semiconductor photodetectors on an integrated circuit chip
摘要 A semiconductor device is described with a photodetector embedded within and a method of manufacturing the same. The photodetector may be formed above the conductive layers within the device and may detect transmitted light from the top side of the device. The process of manufacturing the device may include a damascene or a subtractive etch process.
申请公布号 US2007235877(A1) 申请公布日期 2007.10.11
申请号 US20060394818 申请日期 2006.03.31
申请人 RESHOTKO MIRIAM;BLOCK BRUCE;KENCKE DAVID 发明人 RESHOTKO MIRIAM;BLOCK BRUCE;KENCKE DAVID
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
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