发明名称 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A SILICON OXYNITRIDE FILM |
摘要 |
A semiconductor device manufacturing method includes: a process of forming an isolation trench on the surface of a semiconductor substrate; a process of forming a thermally-oxidized film on the surface of the isolation trench; a process of depositing a silicon oxynitride film on the semiconductor substrate via the thermally-oxidized film; a process of heat-treating the silicon oxynitride film in an oxidizing atmosphere; and a process of etching the top of the thermally-oxidized film and the heat-treated silicon oxynitride film.
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申请公布号 |
US2007238310(A1) |
申请公布日期 |
2007.10.11 |
申请号 |
US20070697082 |
申请日期 |
2007.04.05 |
申请人 |
ELPIDA MEMORY, INC. |
发明人 |
MATSUDA YO;AISO FUMIKI;HIROTA TOSHIYUKI |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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