| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the quality of an epitaxially grown nitride-based compound semiconductor crystal by using a sapphire substrate slightly inclined to C-axis; and to provide a nitride-based compound semiconductor element having a very smooth surface state. <P>SOLUTION: A mirror-polished sapphire (0001) inclined by 0.05 to 0.2° from <0001> orientation is used as the substrate 201. By keeping the inclination angle within a range of 0.05 to 0.2°, the step 202 density on the sapphire substrate can be optimally controlled and the nitride-based compound semiconductor element being extremely flat and having a reduced defect density and improved electrical and optical characteristics can be obtained. The nitride-based compound semiconductor means a compound expressed by general formula: In<SB>x</SB>Ga<SB>y</SB>Al<SB>z</SB>N (wherein, x+y+z=1, 0≤x≤1, 0≤y≤1 and 0≤z≤1). <P>COPYRIGHT: (C)2008,JPO&INPIT |
