发明名称 VACUUM VAPOR DEPOSITION DEVICE AND SUBSTRATE VAPOR DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vacuum vapor deposition device and a substrate vapor deposition method in which a correcting mechanism to correct misalignment in deposition amounts of vapor deposition particles on a substrate is improved in matching property with a vapor source and in handling convenience. SOLUTION: The vacuum vapor deposition device 100 includes a vacuum chamber 10 the inside 10e of which can be evacuated, vapor sources 11a, 11b disposed in the vacuum chamber 10 to allow vapor deposition particles to disperse toward a substrate, a substrate rotating mechanism 22 which can rotate the substrate 12 in the vacuum chamber 10, and a correcting mechanism 30 having a correcting member 31 that corrects misalignment in deposition amounts of vapor deposition particles on the substrate 12 correlating to a deviation amount between vaporizing points P of the vapor sources 11a, 11b and the substrate 12, wherein while the vapor deposition particles are dispersed from the vaporization points P to the substrate 12, the correcting member 31 swings in gas flow areas A, B where the vapor deposition particles pass. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007262538(A) 申请公布日期 2007.10.11
申请号 JP20060092119 申请日期 2006.03.29
申请人 SHIN MEIWA IND CO LTD 发明人 ENDO KAZUHIRO;MIKI HIROAKI;KISHI YOSHIFUMI;IKEJIRI TATSUYA;MITANI SHIGENORI;SUMINO KOJI
分类号 C23C14/24;G02B5/28 主分类号 C23C14/24
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