| 摘要 |
A method for forming a fuse box of a semiconductor device is provided to increase a gap between fuse lines to effectively suppress damage to adjacent fuses during fuse blowing. A method for forming a fuse box of a semiconductor device includes the steps of etching a second protection layer(53), a first protection layer(52), a third interlayer dielectric(51), and a certain thickness of second interlayer insulating layer(47) to form a repair trench by remaining a second interlayer dielectric(47) having a predetermined thickness, and forming two trenches not to etch a second interlayer dielectric(47), the third interlayer dielectric(51), the first protection layer(52), and the second protection layer(53) on a first contact plug(45).
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