| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, which allows measurement of a gate leak current of a pull-down transistor of SRAM cell. <P>SOLUTION: The first pull-down transistors of the SRAM cells MC00-MC30 are formed on a P well 51_0, and the second pull-down transistors of the SRAM cells MC0j-MC3j and the first pull-down transistors of the SRAM cells MC0(j+1)-MC3(j+1) are formed on a P well 51_j+1 (j=0,1,2), and the second pull-down transistors of the SRAM cells MC03-MC33 are formed on a P well 51_4. The P wells 51_0, 51_2 and 51_4 are connected to an input terminal of a gate leak current measuring circuit 18, and the P wells 51_1, 51_3 are connected to an input terminal of a gate leak current measuring circuit 19. <P>COPYRIGHT: (C)2008,JPO&INPIT |
