| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology for enhancing the security of information stored in a semiconductor device. <P>SOLUTION: A multilayer wiring layer is formed on a semiconductor substrate 20. An interconnection 42 is formed on the uppermost wiring layer of the multilayer wiring layer. A silicon oxide film 43, a colored thin film 44, and a silicon oxide film 45 are formed sequentially on the interconnection 42, and a silicon nitride film 46, serving as a surface protection film, is formed on the silicon oxide film 45. More specifically, the colored thin film 44 is formed between the interconnection 42, constituting the uppermost wiring layer and the silicon nitride film 46, that serves as a surface protecting film. The colored thin film 44 has function of attenuating visible light and laser light in a prescribed wavelength region, and, for example, is formed of a silicon oxide film containing cobalt oxide. <P>COPYRIGHT: (C)2008,JPO&INPIT |
