| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory that suppresses the leakage current of a ferroelectric substance and can be used stably, and to provide a method of manufacturing the non-volatile memory. SOLUTION: The memory cell of the non-volatile memory 1 comprises: a cell selection transistor 5, and a ferroelectric capacitor 2 connected to the cell selection transistor 5 electrically. The ferroelectric capacitor 2 comprises: a lower electrode 15; a ferroelectric film 17 that is formed on the lower electrode 15, and contains a magnetic element; and an upper electrode 19 formed on the ferroelectric film 17. The non-volatile memory 1 is formed by applying a magnetic field of 10 kOe in a direction vertical to the surface of the ferroelectric film 17 and heating to 400°C. COPYRIGHT: (C)2008,JPO&INPIT
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