发明名称 FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a field effect transistor having practical carrier mobility by using a specific organic compound as a semiconductor material. SOLUTION: The field effect transistor employs a diamine compound represented by a formula (1) as a semiconductor material. In the formula (1), X<SB>1</SB>and X<SB>2</SB>each independently denote an oxygen atom, a sulfur atom, or a selenium atom; R<SB>1</SB>and R<SB>2</SB>each independently denote a hydrogen atom, a substitutable aliphatic alkyl group, or a substitutable aromatic group; and R<SB>3</SB>and R<SB>4</SB>each independently denote a hydrogen atom, a substitutable aliphatic alkyl group, a substitutable aliphatic alkoxy group, a substitutable aromatic group, or a substitutable aromatic oxy group. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007266201(A) 申请公布日期 2007.10.11
申请号 JP20060087658 申请日期 2006.03.28
申请人 NIPPON KAYAKU CO LTD 发明人 IKEDA MASAAKI;KUWABARA HIROICHI;ADACHI CHIHAYA
分类号 H01L51/30;C07C229/62;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L51/30
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