| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that reduces a capacity between floating electrodes adjacent to each other while securing a capacitive coupling property between a control electrode and the floating electrode, and to provide its manufacturing method. SOLUTION: The nonvolatile semiconductor memory device is provided with a semiconductor layer, gate insulating films provided on the semiconductor layer, the floating electrodes provided on the gate insulating films, the control electrode provided oppositely to the upper faces of the floating electrodes, first dielectric films respectively interposed between each upper face of the floating electrodes and the control electrode, and second dielectric films respectively provided adjacently to each side-face of the floating electrodes and composed of a dielectric body having a relative permittivity smaller than that of the first dielectric film. COPYRIGHT: (C)2008,JPO&INPIT
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