| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly efficient compound semiconductor device with less energy loss. SOLUTION: An n-type low carrier concentration layer 2 with a carrier concentration as≥10<SP>11</SP>/cm<SP>3</SP>and≤10<SP>16</SP>/cm<SP>3</SP>, a p-type layer 3 with the carrier concentration as≥10<SP>11</SP>/cm<SP>3</SP>and≤10<SP>21</SP>/cm<SP>3</SP>, and an n-type high carrier concentration layer 4 with the carrier concentration≥10<SP>16</SP>/cm<SP>3</SP>and≤10<SP>21</SP>/cm<SP>3</SP>, are sequentially laminated on a low resistance substrate 1. The respective layers 2-4 are made to be 3C-SiC single crystal with the fault density of not more than 10<SP>4</SP>/cm<SP>2</SP>concerning a micropipe, a double-positioning domain, an anti-phase domain, a stacking fault, and a twin band. The compound semiconductor device also includes: a gate insulating film 5 which contacts at least the p-type layer 3, a control electrode 6 which contacts the gate insulating film 5 and is electrically separated from the respective layers 2-4, an upper electrode 7 which contacts at least the p-type layer 3 and the n-type high carrier concentration layer 4, and a lower electrode 8 which contacts the low resistance substrate 1. COPYRIGHT: (C)2008,JPO&INPIT
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