摘要 |
The present invention relates to an oxide film forming method and an oxide deposition apparatus, which make it possible to form an oxide film at a low temperature of 350° C. or less by respectively supplying a silicon-containing gas including at least one of SiH<SUB>4</SUB>, Si<SUB>2</SUB>H<SUB>6</SUB>, Si<SUB>3</SUB>H<SUB>8</SUB>, TEOS, DCS, HCD and TSA, a purge gas, and a reaction gas including at least one of O<SUB>2</SUB>, N<SUB>2</SUB>O, O<SUB>3</SUB>, H<SUB>2</SUB>0 and H<SUB>2</SUB>O<SUB>2 </SUB>into a reaction space continuously and simultaneously while rotating gas injector, and to form an oxide film with a uniform thickness along a step of a lower structure with a micro-pattern since step coverage is improved due to an atomic layer deposition process.
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