发明名称 FIELD EFFECT TRANSISTOR COMPRISING GOLD LAYER, MICROFLUIDIC DEVICE COMPRISING THE FIELD EFFECT TRANSISTOR, AND METHOD OF DETECTING ANALYTE HAVING THIOL GROUP USING THE FIELD EFFECT TRANSISTOR AND THE MICROFLUIDIC DEVICE
摘要 A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a polarity of the substrate, a channel region disposed between the source region and the drain region, an insulating layer formed of an electrically insulating material and disposed on the channel region, a gold layer disposed on the insulating layer and a reference electrode disposed apart from the gold layer.
申请公布号 US2007235760(A1) 申请公布日期 2007.10.11
申请号 US20070733539 申请日期 2007.04.10
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 SHIM JEO-YOUNG;YOO KYU-TAE;LEE KYU-SANG;CHUNG WON-SEOK;CHO YEON-JA;YOO CHANG-EUN
分类号 H01L31/00 主分类号 H01L31/00
代理机构 代理人
主权项
地址