发明名称 |
FIELD EFFECT TRANSISTOR COMPRISING GOLD LAYER, MICROFLUIDIC DEVICE COMPRISING THE FIELD EFFECT TRANSISTOR, AND METHOD OF DETECTING ANALYTE HAVING THIOL GROUP USING THE FIELD EFFECT TRANSISTOR AND THE MICROFLUIDIC DEVICE |
摘要 |
A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a polarity of the substrate, a channel region disposed between the source region and the drain region, an insulating layer formed of an electrically insulating material and disposed on the channel region, a gold layer disposed on the insulating layer and a reference electrode disposed apart from the gold layer.
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申请公布号 |
US2007235760(A1) |
申请公布日期 |
2007.10.11 |
申请号 |
US20070733539 |
申请日期 |
2007.04.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
SHIM JEO-YOUNG;YOO KYU-TAE;LEE KYU-SANG;CHUNG WON-SEOK;CHO YEON-JA;YOO CHANG-EUN |
分类号 |
H01L31/00 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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