METHOD FOR MANUFACTURING OF THIN FILM TRANSISTOR PANEL

摘要

A method for manufacturing a thin film transistor panel is provided to use a general mask during a protection layer etching process, not a slit mask, to obtain a process margin. A method for manufacturing a thin film transistor panel includes the steps of connecting a gate drive part(400) to gate wires(G1a-Gnb) to apply a gate signal to the gate wire, and generating two gradation voltage groups related to transmissivity of a pixel using a gray voltage generator(800). The gate drive part(400) is disposed at one side of a liquid crystal panel assembly(300) to be connected to all gate lines. A data drive part(500) is connected to data lines(D1-Dm) of the liquid crystal panel assembly(300) to select any one of the two gradation voltage groups from the gray voltage generator(800).