| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plurality of features provided by a single exposing process and characterized by an about half interval to a hard mask using a single hard mask etching process and without a photoresist treatment for defining the hard mask. <P>SOLUTION: This system and process is a double patterning system and process using a carbon-based hard mask. This double patterning system provides a means for forming a hard mask feature with a feature interval less than a minimum interval with which the hard mask can be printed according to a single exposure, by of a single hard mask etching process. <P>COPYRIGHT: (C)2008,JPO&INPIT |
