| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having large breakdown strength as compared with conventional one. <P>SOLUTION: In the semiconductor device 100, there are an n-type IGBT 102 and an n-type MOSFET 104 that are parallel each other in the same breakdown voltage structure in semiconductor substrates 110, 112, and the drain-source breakdown voltage of the MOSFET 104 should be smaller than the collector-emitter breakdown voltage of the IGBT 102. An IGBT active region AR 1 in which the IGBT 102 is formed is separated from a MOSFET active region AR 2 in which the MOSFET 104 is formed by a gate finger F as an inactive region. <P>COPYRIGHT: (C)2008,JPO&INPIT |
