| 摘要 |
PROBLEM TO BE SOLVED: To easily process a portion of the base plate of a heat dissipation plate that serves the jointing face to a semiconductor substrate, to have precision of surface roughness and planarity required for bonding, by polishing the surface of the base plate. SOLUTION: The semiconductor device 1 comprises a semiconductor substrate 3, and a heat dissipation plate 2, consisting of a base plate 21 to which the semiconductor substrate 3 is jointed, and a member 22 for positioning the semiconductor substrate 3, with respect to the base plate 21. Since the heat dissipation plate is constituted by jointing the base plate and the positioning plate formed separately, the surface profile at a portion of the base plate that serves as the bonding face to the semiconductor substrate can be processed easily with precision of surface roughness and planarity required for bonding, by polishing the surface of the base plate, before they are jointed. COPYRIGHT: (C)2008,JPO&INPIT
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