| 摘要 |
PROBLEM TO BE SOLVED: To reduce current consumption in a semiconductor memory device during precharging. SOLUTION: During precharging, a precharge potential control circuit 106 applies a low voltage for application equal to or lower than a predetermined first detection potential to a pair of global data lines GDL, GDL when a potential common to the pair of global data lines GDL, GDL is higher than the first detection potential, applies a high voltage for application equal to or higher than a predetermined second detection potential to the pair of global data lines GDL, GDL when the potential common to the pair of global data lines GDL, GDL is lower than the second detection potential, and applies no voltage when the potential of the pair of global data lines GDL, GDL is equal to or lower than the first detection potential and equal to or higher than the second detection potential. COPYRIGHT: (C)2008,JPO&INPIT
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