发明名称 GAS DISTRIBUTION SYSTEM FOR POST-ETCH TREATMENT SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a gas distribution system for a post-etch treatment system. SOLUTION: A post-etch treatment system is described for removing photoresist remnants and etch residues formed during an etching process. For example, the etch residues may contain a material including halogens. The post-etch treatment system comprises a vacuum chamber, a radical generation system connected to the vacuum chamber, a radical gas distribution system that is connected to the radical generation system and configured to distribute reactive radicals above a substrate, and a high-temperature pedestal configured to be connected to the vacuum chamber and to support the substrate. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007266610(A) 申请公布日期 2007.10.11
申请号 JP20070085108 申请日期 2007.03.28
申请人 TOKYO ELECTRON LTD 发明人 TSUKAMOTO YUJI;TOMOZAWA H STEVEN;KIM SAM YONG;HAMELIN THOMAS
分类号 H01L21/3065;H01L21/304 主分类号 H01L21/3065
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