| 摘要 |
A method for manufacturing a semiconductor device includes the steps of: forming a SiO<SUB>2 </SUB>layer on a silicon substrate; forming on the SiO<SUB>2 </SUB>layer an SiN film having a N/Si composition ratio smaller than the stoichiometric composition ratio of SiN by using the ALD technique; and performing a plasma-nitriding process on the SiN layer at a substrate temperature of 550 degrees C. or below.
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