发明名称 |
VERTICAL PLASMA PROCESSING APPARATUS AND METHOD FOR SEMICONDUCTOR PROCESS |
摘要 |
A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.
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申请公布号 |
US2007234961(A1) |
申请公布日期 |
2007.10.11 |
申请号 |
US20070696501 |
申请日期 |
2007.04.04 |
申请人 |
TAKAHASHI TOSHIKI;FUKUSHIMA KOHEI;ORITO KOICHI;SATO JUN |
发明人 |
TAKAHASHI TOSHIKI;FUKUSHIMA KOHEI;ORITO KOICHI;SATO JUN |
分类号 |
C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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