发明名称 |
ETCHED NANOFIN TRANSISTORS |
摘要 |
<p>One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment, a fin is formed from a crystalline substrate. A first source/drain region is formed in the substrate beneath the fin. A surrounding gate insulator is formed around the fin. A surrounding gate is formed around the fin and separated from the fin by the surrounding gate insulator. A second source/drain region is formed in a top portion of the fin. Various embodiments etch a hole in a layer over the substrate, form sidewall spacers in the hole, form a fin pattern from the sidewall spacers, and etch into the crystalline substrate to form the fin from the substrate using a mask corresponding to the fin pattern. Other aspects are provided herein.</p> |
申请公布号 |
WO2007114927(A1) |
申请公布日期 |
2007.10.11 |
申请号 |
WO2007US08400 |
申请日期 |
2007.04.03 |
申请人 |
MICRON TECHNOLOGY, INC.;FORBES, LEONARD |
发明人 |
FORBES, LEONARD |
分类号 |
H01L29/06;H01L21/336;H01L21/8242;H01L29/78;H01L29/786 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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