| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, with which parasitic capacity and parasitic resistance can be reduced than theretofore, during the normal manufacturing step of a semiconductor device. <P>SOLUTION: Only a semiconductor layer (epitaxial layer and single-crystal silicon layer) wherein semiconductor elements are formed is left, and a semiconductor substrate or an insulating layer (embedded silicon oxide layer) is removed, or the semiconductor layer (epitaxial layer and single-crystal silicon layer) is further removed, in a manner that it does not lose functions as a semiconductor element, and a desired support substrate (second support substrate) is stuck and is divided into pieces. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
