| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical semiconductor device in which an ON-voltage or ON-resistance is low, and generated heat is dispersed. SOLUTION: The semiconductor device 70 is provided with a first layer 11, and a second layer 12 provided between the first layer 11 and a substrate 30. The first layer 11 has a rear surface electrode layer 71, a semiconductor layer 78 formed on the rear surface electrode layer 71, and a front surface electrode layer 88 formed on the semiconductor layer 78. A function structure configured by a plurality of kinds of semiconductor regions is incorporated into the semiconductor layer 78, and the function structure has a function of switching a current flowing between the front surface electrode layer 88 and the rear surface electrode layer 71 into a conduction state and a non-conduction state. The second layer 12 is joined to the rear surface electrode layer 71 of the first layer 11 without using solder, and at least a surface contacting the rear surface electrode layer 71 is configured of an insulator. COPYRIGHT: (C)2008,JPO&INPIT |
