METHOD OF PROCESSING THREE-DIMENSIONALLY SHAPED SEMICONDUCTOR MEMBER AND TRANSISTOR FORMED USING THE METHOD

摘要

PROBLEM TO BE SOLVED: To enable a three-dimensionally shaped semiconductor member to be processed at as low costs as possible. SOLUTION: The method comprises the steps of: forming a plateau portion on the semiconductor member that has a projection; selectively coating the plateau portion with a self-organizing material or a solution thereof to form a self-organizing material film; creating a latent image in a self-organizing manner on the self-organizing material film; developing the latent image by etching to form a pattern of the self-organizing material film; and processing the semiconductor member using the pattern as a mask. COPYRIGHT: (C)2008,JPO&INPIT