| 摘要 |
PROBLEM TO BE SOLVED: To provide an SIMOX (Separation by Implanted Oxygen) wafer in which the roughness of an SOI surface is very excellent. SOLUTION: The SIMOX wafer is manufactured by implanting oxygen ions onto the surface of an Si substrate, and then, performing high-temperature annealing. In this case, at least the atmosphere of the final stage of the high-temperature annealing is made into an atmosphere containing 3-10% oxygen in volume% for Ar or N<SB>2</SB>. COPYRIGHT: (C)2008,JPO&INPIT |
