发明名称 SILICON SUBSTRATE FOR X-RAY DIFFRACTION MEASUREMENT
摘要 PROBLEM TO BE SOLVED: To provide a measuring substrate usable in X-ray diffraction measurement, even in a trace amount of sample. SOLUTION: This silicon substrate for the X-ray diffraction measurement has one or more of recessed portions in the substrate, a substrate thickness in a bottom of the each recessed portion is within a range of 0.1-100μm, and a substrate thickness excepting the recessed portion is within a range of 280-1000μm. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007263610(A) 申请公布日期 2007.10.11
申请号 JP20060085893 申请日期 2006.03.27
申请人 OSAKA UNIV 发明人 KAWAI TOMOJI;TAGAWA SEIICHI;MATSUI YOSHINORI;KAWAHARA TOSHIO
分类号 G01N23/207;G01N1/32 主分类号 G01N23/207
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