发明名称 NON-UNIFORM MINORITY CARRIER LIFETIME DISTRIBUTIONS IN HIGH PERFORMANCE SILICON POWER DEVICES
摘要 This invention is directed to a process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The segment is then cooled at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a segment having the desired vacancy concentration profile. Platinum atoms are then in-diffused into the silicon matrix such that the resulting platinum concentration profile is substantially related to the concentration profile of the crystal lattice vacancies.
申请公布号 US2007238266(A1) 申请公布日期 2007.10.11
申请号 US20070763043 申请日期 2007.06.14
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 FALSTER ROBERT J.
分类号 H01L21/322;H01L21/22;H01L29/167;H01L29/32 主分类号 H01L21/322
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