发明名称 |
NON-UNIFORM MINORITY CARRIER LIFETIME DISTRIBUTIONS IN HIGH PERFORMANCE SILICON POWER DEVICES |
摘要 |
This invention is directed to a process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The segment is then cooled at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a segment having the desired vacancy concentration profile. Platinum atoms are then in-diffused into the silicon matrix such that the resulting platinum concentration profile is substantially related to the concentration profile of the crystal lattice vacancies.
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申请公布号 |
US2007238266(A1) |
申请公布日期 |
2007.10.11 |
申请号 |
US20070763043 |
申请日期 |
2007.06.14 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FALSTER ROBERT J. |
分类号 |
H01L21/322;H01L21/22;H01L29/167;H01L29/32 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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