Indirect measurement of negative margin voltages in endurance testing of EEPROM cells

摘要

An electronic test structure and method for testing non-volatile memory cells. The structure includes a first transistor coupled in series to a floating gate transistor whereby a source of the first transistor is coupled to a positive power supply voltage and a source of the floating gate transistor is coupled to a power supply ground. A gate of the first transistor is further coupled to a source of the first transistor. A second transistor is coupled in series with a memory cell with a source of the second transistor coupled to a positive power supply voltage and a gate of the second transistor is coupled to the drain of the first transistor.