| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems of a performance-improving the technique for microfabrication of a semiconductor element or the like that uses ultraviolet radiation, excimer laser light, an electron beam or the like, and to provide a positive photosensitive composition, having high sensitivity and high resolution and satisfying a good pattern profile. <P>SOLUTION: The positive photosensitive composition comprises an acid generator which generates acid upon irradiation with a high energy line and a matrix component which has an oxanorbornadiene skeleton, particularly an oxabenzonorbornadiene skeleton within a molecule and is isomerized by the acid generated from the acid generator. At polarity change of a resist material, isomerization reaction of oxanorbornadienes into phenols, particularly, isomerization reaction of oxabenzonorbornadienes into naphthols is utilized, rather than a deprotection reaction. <P>COPYRIGHT: (C)2008,JPO&INPIT |
