| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where an increase of film thickness in a gate insulating film can be controlled, and to provide a manufacturing method of the device. SOLUTION: The manufacturing method is provided with a step for forming the insulating film 20 on a semiconductor substrate 10, a step for forming a first metal film 30 on the insulating film, a step for forming a second metal film 50, whose formation of energy, when metal oxide for per oxygen molecule mol is formed, is negative and whose absolute value of the formation energy is larger than that of the first metal film, a step for patterning the first and second metal films, and a step for performing prescribed heat treatment. COPYRIGHT: (C)2008,JPO&INPIT |
