| 摘要 |
PROBLEM TO BE SOLVED: To excellently mitigate electrolysis convergence by allowing an AC edge to be gentle and preventing the generation of a divot in the upper end section of a trench. SOLUTION: A method for manufacturing a semiconductor device includes: a process for forming a first oxide film on a semiconductor substrate; a process for forming a silicon nitride film on the first oxide film; a process for forming an opening part to reach the semiconductor substrate by etching the first oxide film and the silicon nitride film; a process for forming a second oxide film on the semiconductor substrate in the opening part, the surface of the silicon nitride film, and a side surface in the opening of the silicon nitride film by radical oxidation; a process for removing the second oxide film on the semiconductor substrate in the opening part and the surface of the silicon nitride film; a process for forming a groove (the trench) on a silicon substrate by defining the silicon nitride film and the second oxide film of the side wall of the silicon nitride film as a mask; and a process for forming a third oxide film in the groove part. COPYRIGHT: (C)2008,JPO&INPIT
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