| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, which excels in resolution and improves line edge roughness and pattern collapse even in the formation of a fine pattern of ≤100 nm, excels in sensitivity and dissolution contrast even in exposure with EUV light, and has suitability to liquid immersion exposure, and to provide a pattern forming method using the same. <P>SOLUTION: The positive resist composition comprises a resin (A1) which is decomposed by the action of an acid to increase solubility in an alkali developer, a resin (A2) which has a rate of dissolution in an alkali developer ≥3 times as high as that of the resin (A1), and which is decomposed by the action of an acid to increase solubility in an alkali developer, and a compound (B) which generates an acid upon irradiation with an actinic ray or radiation. The pattern forming method using the resist composition is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
