发明名称 PIEZOELECTRIC THIN FILM RESONATOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film resonator with high performance wherein spurious radiation by traversal propagation is reduced. <P>SOLUTION: The piezoelectric thin film resonator 10 includes: a substrate 1; a resonance section 10 formed above the substrate 1, including a first electrode layer 12, a piezoelectric layer 14, and a second electrode layer 16 and generating acoustic vibration in the thickness direction of the piezoelectric layer 14 through the application of an electric field to the piezoelectric layer 14 by the first and second electrode layers 12, 16, At least a set of sides of the resonance section 10 are formed in parallel in plane view, and a shortest interval W between intervals of a set of sides in parallel is set to the thickness H or below of the resonance section 10. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007267108(A) 申请公布日期 2007.10.11
申请号 JP20060090253 申请日期 2006.03.29
申请人 SEIKO EPSON CORP 发明人 HIGUCHI AMAMITSU;FURUHATA MAKOTO
分类号 H03H9/17;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/29 主分类号 H03H9/17
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