| 摘要 |
A method for measuring a channel boosting voltage in a NAND flash memory device is provided to perform yield analysis and failure analysis easily as judging program disturbance characteristics by accurately monitoring the boosting voltage calculated inaccurately during a program operation. According to a method for measuring a channel boosting voltage in a NAND flash memory device, a path bias with a fixed level is applied to unselected cells in an erase state. A first threshold voltage of the selected cell where the first path bias is applied is measured according to the level of the first path bias applied to the selected cell in an erase state(S205). A program bias is applied to the selected cell in an erase state, and a second threshold voltage of the selected cell where the program bias is applied is measured according to the level of the second path bias applied to the unselected cell in an erase state(S215). The second threshold voltage measured when the second path bias in an equal level to the path bias applied during the program operation is detected, and the level of the first path bias applied when the first threshold voltage equal to the second threshold voltage is detected. A channel boosting voltage is measured using the level of the detected first path bias(S223). |
