| 摘要 |
A cover film (11) is formed, and the backside of a semiconductor substrate (1) is polished. For example, an aluminum film (12) having a thickness of about 20 nm to 50 nm is then formed, for example, by sputtering on the backside of the semiconductor substrate (1). In this case, the level of the warpage of the semiconductor substrate (1) can be regulated by regulating the method for the formation of the aluminum film (12), the thickness of the aluminum film (12) and the like. According to this method, poor data retention can be reduced by regulating the formation method, thickness and the like of the aluminum film (12) to regulate the warpage level of the semiconductor substrate (1). Further, the entry of moisture or the like from the backside of the semiconductor substrate (1) can be suppressed by the presence of the aluminum film (12).
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